? 2010 ixys corporation, all rights reserved ds100216b(06/10) v dss = 500v i d25 = 24a r ds(on) 270 m t rr(typ) = 400 ns n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 50 a i a t c = 25 c12a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss ,t j 150 c 15 v/ns p d t c = 25 c 480 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c f c mounting force to-263 10..65 / 2.2..14.6 nm/lb.in. m d mounting torque (to-220, to-3p & to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-3p 5.5 g to-247 6.0 g ixta460p2 IXTP460P2 ixtq460p2 ixth460p2 polarp2 tm power mosfet features z avalanche rated z fast intrinsic diode z dynamic dv/dt rated z low package inductance advantages z high power density z easy to mount z space savings applications z switch-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g = gate d = drain s = source tab = drain symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 25 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 270 m g d s to-220ab (ixtp) d (tab) to-3p (ixtq) d g s d (tab) to-247 (ixth) g s d (tab) d to-263 aa (ixta) g s d (tab)
ixys reserves the right to change limits, test conditions, and dimensions. ixta460p2 IXTP460P2 ixtq460p2 ixth460p2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 0.5 ? i d25 , note 1 14 24 s c iss 2890 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 280 pf c rss 22 pf t d(on) 15 ns t r 9 ns t d(off) 30 ns t f 5 ns q g(on) 48 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 13 nc q gd 16 nc r thjc 0.26 c/w r thcs to-220 0.50 c/w r thcs to-3p & to-247 0.25 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 24 a i sm repetitive, pulse width limited by t jm 96 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 400 ns i rm 19.6 a q rm 3.9 c ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1. pulse test, t 300 s, duty cycle, d 2%. resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 10 (external) i f = 12a, -di/dt = 100a/ s v r = 100v, v gs = 0v
? 2010 ixys corporation, all rights reserved pins: 1 - gate 2 - drain 3 - source to-220 (ixtp) outline to-3p (ixtq) outline to-263 (ixta) outline dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 1. gate 2. collector 3. emitter 4. collector bottom side e ? p to-247 (ixth) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc ixta460p2 IXTP460P2 ixtq460p2 ixth460p2
ixys reserves the right to change limits, test conditions, and dimensions. ixta460p2 IXTP460P2 ixtq460p2 ixth460p2 fig. 1. output characteristics @ t j = 25oc 0 5 10 15 20 25 012345678 v ds - volts i d - amperes v gs = 10v 7v 5 v 6 v fig. 2. extended output characteristics @ t j = 25oc 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 v ds - volts i d - amperes v gs = 10v 7v 6 v 5 v fig. 3. output characteristics @ t j = 125oc 0 5 10 15 20 25 0 5 10 15 20 v ds - volts i d - amperes v gs = 10v 7v 5 v 4v 6v fig. 4. r ds(on) normalized to i d = 12a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 24a i d = 12a fig. 5. r ds(on) normalized to i d = 12a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 0 5 10 15 20 25 30 35 40 45 50 55 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 4 8 12 16 20 24 28 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
? 2010 ixys corporation, all rights reserved fig. 7. input admittance 0 5 10 15 20 25 30 35 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 0 5 10 15 20 25 30 35 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 80 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 q g - nanocoulombs v gs - volts v ds = 250v i d = 12a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 0.01 0.1 1 10 100 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms ixta460p2 IXTP460P2 ixtq460p2 ixth460p2
ixys reserves the right to change limits, test conditions, and dimensions. ixta460p2 IXTP460P2 ixtq460p2 ixth460p2 ixys ref: t_460p2(57)6-03-10-a fig. 13. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - oc / w
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